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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION With TO-220Fa package Wide area of safe operation Complement to type 2SA1304 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER CHA IN Collector current Base current Collector-base voltage Collector-emitter voltage Emitter-base voltage E SEM NG Open emitter OND IC CONDITIONS TOR UC VALUE 150 150 5 1.5 0.5 UNIT V V V A A Open base Open collector Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2 W 20 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SC3296 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 150 V VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA 1.5 V VBE Base-emitter on voltage IC=0.5A ; VCE=10V 0.85 V ICBO Collector cut-off current VCB=120V; IE=0 10 |I A IEBO Emitter cut-off current VEB=5V; IC=0 10 |I A hFE DC current gain IC=0.5A ; VCE=10V 40 140 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency IC=0.5A ; VCE=10V CHA IN E SEM NG OND IC TOR UC 4 35 pF MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3296 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3296 CHA IN E SEM NG OND IC TOR UC 4 |
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